<B>From the Contents:</B> Fundamentals of the Process Modeling for Semiconductor Crystal Growth
Macroscopic Inhomogeneity
Avoidance of Macroscopic Inhomogeneity
Microscopic Inhomogeneity
Unsteady Buoyancy Convection as an Origin of Microinhomogeneity
Measures to Avoid Convection Induced Microinhomogeneity
Concluding Considerations for an Optimization of Crystal Growth Configurations.