Some factors affecting the growth of beta Silicon carbide / Charles E. Ryan...[et al.].

L. G. Hanscom Field, Mass. : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1966.

vi, 17 p. : ill. ; 28 cm.

The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).

English

April 15, 2009

Includes bibliographical references (p. 17).